Semiconductor device and method of forming epitaxial layer

ABSTRACT

A semiconductor device includes a semiconductor substrate and a plurality of transistors. The semiconductor substrate includes at least an iso region (namely an open region) and at least a dense region. The transistors are disposed in the iso region and the dense region respectively. Each transistor includes at least a source/drain region. The source/drain region includes a first epitaxial layer having a bottom thickness and a side thickness, and the bottom thickness is substantially larger than or equal to the side thickness.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device and a method offabricating the same, and more particularly, to a semiconductor devicehaving an epitaxial layer and the method of forming the epitaxial layer.

2. Description of the Prior Art

With the trend of miniaturization of semiconductor device dimensions,the scale of the gate, source and drain of a transistor has dropped inaccordance with the reduction of the critical dimension (CD). Due to thephysical limitation of the materials used, the decrease of the gate,source and drain scale results in the diminution of the number ofcarriers that determine the magnitude of the current in the transistorelement, which can adversely affect the performance of the transistor.Accordingly, in order to boost up a metal-oxide-semiconductor (MOS)transistor, increasing carrier mobility is an important consideration inthe field of current semiconductor technique.

In the conventional technologies, a selective epitaxial growth (SEG)process is used to form a strained silicon layer. For example, after theformation of the gate, a silicon-germanium (SiGe) layer is formed in thepredetermined location of the source/drain region, in which the latticeconstant of silicon (Si) is 5.431 angstroms (A), and the latticeconstant of germanium (Ge) is 5.646 A. The lattice constant of the SiGelayer is larger than the lattice constant of Si, which modifies the bandstructure of Si, and leads to the formation of a compressive strainedsilicon layer. The strained silicon layer induces stress in the channelregion of PMOS transistor and enhances carrier mobility.

In order to meet the various requirements of consumers, electronicproducts are commonly constituted of various kinds of element regions,having different functions. In accordance with the demands ofspecifications and characteristics, each element region has a specificpattern density. To avoid a process deviation caused by themicro-loading effect, the semiconductor processes, such as the selectiveepitaxial growth process, may be respectively performed on thecorresponding regions according to the pattern density. However, thisapproach affects the manufacturing costs and extends the manufacturingtime. Therefore, establishing a semiconductor process simultaneouslyapplicable to all of the element regions having individual patterndensities, without micro-loading effect, is an important issue in thisfield.

SUMMARY OF THE INVENTION

It is therefore one of the objectives of the present invention toprovide a semiconductor device having epitaxial layers, and a method offorming epitaxial layer avoiding the process deviations caused by themicro-loading effect.

According to an exemplary embodiment of the present invention, themethod of forming an epitaxial layer includes the following steps.First, a semiconductor substrate including at least a recess isprovided. Then, a first selective epitaxial growth (SEG) process isperformed to form a first epitaxial layer in the recess, in which thefirst selective epitaxial growth process has an operating pressuresubstantially smaller than or equal to 10 torr.

According to an exemplary embodiment of the present invention, themethod of forming an epitaxial layer includes the following steps.First, a semiconductor substrate including at least a recess isprovided. Then, a first selective epitaxial growth (SEG) process isperformed to form a first epitaxial layer in the recess, in which gasesincluding dichlorosilane (DCS), Germane (GeH₄) and hydrochloric acid(HCl) are introduced, and the ratio of the concentration forDCS:GeH₄:HCl may be (0.5-2.1):(1.5-3.3):1.

According to an exemplary embodiment of the present invention, asemiconductor device is provided. The semiconductor device includes asemiconductor substrate and a plurality of transistors. Thesemiconductor substrate includes at least an iso region (namely an openregion) and at least a dense region. The transistors are respectivelydisposed in the iso region and the dense region, and each transistorincludes at least a source/drain region. Furthermore, each of thesource/drain regions includes a first epitaxial layer, the firstepitaxial layer has a bottom thickness and a side thickness, with thebottom thickness larger than the side thickness, for each firstepitaxial layer.

The present invention provides a selective epitaxial growth processhaving an operating pressure smaller than or equal to 10 torr forforming the first epitaxial layer. This step can be further performed onthe semiconductor substrate in a plurality of regions having differentpattern densities to form simultaneously the first epitaxial layers inthe recesses, with each first epitaxial layer having the above mentionedspecific structure characteristic, that is, its bottom thickness beinglarger than its side thickness. Accordingly, the process deviation dueto the micro-loading effect may be eliminated, and the reliability ofthe semiconductor device can be improved.

These and other objectives of the present invention will no doubt becomeobvious to those of ordinary skill in the art after reading thefollowing detailed description of the preferred embodiment that isillustrated in the various figures and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 through FIG. 6 illustrate a method of forming an epitaxial layeraccording to the first exemplary embodiment of the present invention.

FIG. 7 through FIG. 9 illustrate a method of forming an epitaxial layeraccording to the second exemplary embodiment of the present invention.

FIG. 10 illustrates a semiconductor device according to an exemplaryembodiment of the present invention.

DETAILED DESCRIPTION

To provide a better understanding of the present invention, preferredexemplary embodiments will be described in detail. The preferredexemplary embodiments of the present invention are illustrated in theaccompanying drawings with numbered elements.

Please refer to FIG. 1 through FIG. 6. FIG. 1 through FIG. 6 illustratea method of forming an epitaxial layer according to the first exemplaryembodiment of the present invention. As shown in FIG. 1, a semiconductorsubstrate 10 is provided, and the semiconductor substrate 10 includes atleast a recess 12. A plurality of regions (not shown) could be definedon the semiconductor substrate 10, and each of the regions has its ownpattern density. To simplify the explanation, the formation of atransistor in a region having any pattern density is used as an example.The semiconductor substrate 10 could be a substrate composed of AsGa,silicon on insulator (SOI) layer, epitaxial layer, SiGe layer or othersemiconductor material. The semiconductor substrate 10 may furtherinclude at least a gate structure 14 and at least a shallow trenchisolation (STI) 16, and the recess 12 is located in the active regionbetween the gate structure 14 and the STI 16. The gate structure 14includes a gate dielectric layer 18, a gate conductive layer 20 disposedon the gate dielectric layer 18, and a cap layer 22 disposed on the gateconductive layer 20. The gate dielectric layer 18 could be made ofinsulating materials such as silicon oxide, silicon oxynitride formedthrough thermal oxidation process or deposition process, or other high-kgate dielectric layers with a dielectric constant larger than 4. Thegate conductive layer 20 may include conductive materials such aspolysilicon, or metal layer with specific work function. The cap layer22 can be made of insulating materials such as silicon nitride, siliconoxide, or silicon oxynitride. The STI 16 may include dielectric materialsuch as silicon oxide. As the gate structure processes and the STIprocesses are known to those skilled in the art, the details are omittedherein for brevity.

The method of forming the recess 12 includes the following steps. Atfirst, a first spacer 24 is selectively formed on the sides of each gatestructure 14. Subsequently, an anisotropic dry etching process isperformed to form the recesses 12 in the semiconductor substrate 10 ateach of the two sides of the gate structure 14, in which the formed gatestructure 14 and the formed first spacer 24 are used as masks.Additionally, it is also possible to combine a dry etching process witha wet etching process to form the recesses 12 in various shapes such asbarrel shape, hexagon, or polygon, therefore, greater stress could beinduced and provided to the later formed channel region by the epitaxiallayers in the recesses 12. The first spacer 24 may include a monolayeredstructure or a multilayered structure made of silicon oxide or siliconnitride, moreover, the first spacer 24 could be a disposable spacer,that is, the first spacer 24 could be partially or totally removed aftera later selective epitaxial growth process, but not limited thereto.

To form the epitaxial layer having high quality in the recess 12, beforefurther epitaxial growth processes, a pre-clean step is first performed.For example, clean solution such as dilute hydrofluoric acid (DHF)solution, or a SPM solution including sulfuric acid (H₂SO₄), hydrogenperoxide (H₂O₂) and deionized water (DI water), is used to removeimpurities such as native oxide layer upon the surface of the recess 12.Besides, a pre-bake step could also be implemented; for instance, thesemiconductor substrate 10 is heated in a chamber with hydrogenintroduced into to remove the native oxide layer upon the surface of therecess 12 or the residual clean solution.

As shown in FIG. 2, a first selective epitaxial growth (SEG) process isperformed to form a first epitaxial layer 26 in the recess 12. In thisexemplary embodiment, the first selective epitaxial growth process hasan operating pressure substantially smaller than or equal to 10 torr.For instance, gases comprising dichlorosilane (DCS), Germane (GeH₄) andhydrochloric acid (HCl) are introduced into the chamber with theoperating pressure substantially smaller than or equal to 10 torr toform the first epitaxial layer 26 in the recess 12. The first epitaxiallayer 26 includes a first material such as silicon-germanium (SiGe),with a lattice constant of the first material different from a latticeconstant of the semiconductor substrate 10. DCS is the gas source ofsilicon, GeH₄ is the gas source of germanium, and a first germaniumconcentration of the first material may be determined by theconcentration ratio of DCS and the concentration ratio of GeH₄.Preferably, the concentration ratio of DCS is substantially smaller thanthe concentration ratio of GeH₄. Additionally, HCl is used for theselective formation of the first epitaxial layer 26. Accordingly, thefirst epitaxial layer 26 could be formed on the silicon substrate of thesurface of the recess 12, instead of being formed on the STI 16 or thefirst spacer 24, made of silicon oxide or silicon nitride. Preferably, aconcentration ratio of HCl is substantially between the concentrationratio of DCS and the concentration ratio of GeH₄. In the introducedgases for forming the first epitaxial layer 26, the ratio of theconcentration for DCS:GeH₄:HCl may be (0.5-2.1):(1.5-3.3):1 to form thefirst epitaxial layer 26 having the first germanium concentrationbetween 20% and 30%. In this exemplary embodiment, the ratio of theconcentration of DCS, the concentration of GeH₄ and the concentration ofHCl may preferably be 0.97:2.2:1 to form the first epitaxial layer 26having the first germanium concentration at 25%, but not limitedthereto.

It is appreciated that the first epitaxial layer 26 has a bottomthickness t1 and a side thickness t2, and the bottom thickness t1 of thefirst epitaxial layer 26 is substantially smaller than a depth h1 of therecess 12. In other words, the recess 12 is not totally filled with thefirst epitaxial layer 26. Moreover, the bottom thickness t1 of the firstepitaxial layer 26 is substantially larger than or equal to the sidethickness t2 of the first epitaxial layer 26, and a ratio of the bottomthickness t1 to the side thickness t2 is substantially larger than orequal to 1, that is, the thickness of the first epitaxial layer 26formed on the bottom surface of the recess 12 is substantially largerthan or equal to the thickness of the first epitaxial layer 26 formed onthe side surfaces of the recess 12. In this exemplary embodiment, theratio of the bottom thickness t1 to the side thickness t2 is preferablyand substantially larger than or equal to 1.4.

As shown in FIG. 3, a second selective epitaxial growth process issubsequently performed to form a second epitaxial layer 28 on the firstepitaxial layer 26. In this exemplary embodiment, the second selectiveepitaxial growth process has an operating pressure substantially between1 torr and 10 torr. For instance, gases including DCS, GeH₄ and HCl areintroduced into the same chamber in which the first selective epitaxialgrowth process has been previously performed, to form the secondepitaxial layer 28 on the first epitaxial layer 26. The second epitaxiallayer 28 includes a second material such as silicon-germanium (SiGe),and a lattice constant of the second material which is also differentfrom the lattice constant of the semiconductor substrate 10.Additionally, a second germanium concentration of the second material ofthe second epitaxial layer 28 is substantially larger than the firstgermanium concentration of the first material of the first epitaxiallayer 26, for instance, the second epitaxial layer 28 has the secondgermanium concentration at 36%. The second epitaxial layer 28 is furtherused for inducing stress to the channel region 29 under the gatestructure 14.

As shown in FIG. 4, the second selective epitaxial growth process couldbe an in-situ doped epitaxial growth process. Accordingly, during theformation of the second epitaxial layer 28, the conductive dopants maybe simultaneously doped into the second epitaxial layer 28 to form adoped source/drain region 30. In this exemplary embodiment, the secondselective epitaxial growth process may be in-situ doped epitaxial growthprocess. For instance, if the later formed transistor is PMOStransistor, during the formation of the second epitaxial layer 28, theconductive dopants such as boron ions may be simultaneously implantedinto the second epitaxial layer 28 to serve as the corresponding dopedsource/drain region 30. Furthermore, an optional annealing process couldbe performed to activate the doped source/drain region 30.

It is appreciated that the first epitaxial layer 26 and the secondepitaxial layer 28 are preferably made of the same material such assilicon-germanium (SiGe) but having different composition ratios. Forinstance, the second germanium concentration of the second epitaxiallayer 28 is substantially larger than the first germanium concentrationof the first epitaxial layer 26. Additionally, the second epitaxiallayer 28 includes conductive dopants, such as boron ions, while thefirst epitaxial layer 26 does not include any. In order to avoid theabnormal leakage of the later formed transistor, the first epitaxiallayer 26 is disposed between the second epitaxial layer 28 and thesemiconductor substrate 10 to prevent the diffusion of the conductivedopants from the second epitaxial layer 28 to the semiconductorsubstrate 10 through the dislocations between the epitaxial layers andthe semiconductor substrate 10. Moreover, the first selective epitaxialgrowth process of this exemplary embodiment has its operating pressuresubstantially smaller than or equal to 10 torr, compared to the firstselective epitaxial growth process of another exemplary embodimenthaving its operating pressure substantially larger than or equal to 50torr, a volume of the second epitaxial layer 28 on the first epitaxiallayer 26 of this exemplary embodiment is substantially larger than avolume of the second epitaxial layer 28 on the first epitaxial layer 26of another exemplary embodiment. That is, the second epitaxial layer 28of this exemplary embodiment can induce greater stress to the channelregion 29. Moreover, the second epitaxial layer 28 could be disposedabove, at the same level, or below the surface of the semiconductorsubstrate 10.

As shown in FIG. 5, a third selective epitaxial growth process isperformed to form a third epitaxial layer 36 on the second epitaxiallayer 28. In this exemplary embodiment, the third selective epitaxialgrowth process has an operating pressure substantially between 1 torrand 10 torr. For instance, the gas source of germanium, such as GeH₄, isclosed, and the gas source of silicon such as DCS is introduced into thesame chamber in which the first selective epitaxial growth process andthe second selective epitaxial growth process have been previouslyperformed to form the third epitaxial layer 36 on the second epitaxiallayer 28.

As shown in FIG. 6, after the end of the third selective epitaxialgrowth process, the first spacer 24 could be partially or totallyremoved, and a second spacer 34 is further formed. The second spacer 34may be a monolayered structure or multilayered structure, may include aliner, or be a composition thereof. The material of the second spacer 34could be high temperature oxide (HTO), silicon nitride, silicon oxide,or HCD-SiN formed by hexachlorodisilane (Si₂Cl₆), but not limitedthereto. In this exemplary embodiment, the second spacer 34 does notoverlap the third epitaxial layer 36, but it is not limited, the secondspacer 34 may cross the third epitaxial layer 36, in other words, thesecond spacer 34 may partially overlap the third epitaxial layer 36.Subsequently, a self-aligned silicide process is performed to the thirdepitaxial layer 36. Accordingly, a transistor 32 is completed. Amaterial of the third epitaxial layer 36 may include silicon (Si);consequently, the third epitaxial layer 36 can cover the defects on thesurface of the second epitaxial layer 28 and ensure the proper formationof the salicide layer on the third epitaxial layer 36.

The order of the doped source/drain region process and the selectiveepitaxial growth processes could be adjusted according to therequirements of the transistor design. For instance, in an exemplaryembodiment, the gate structure 14 and the second spacer 34 may serve asmasks, and an ion implantation process and an annealing process areperformed on the second epitaxial layer 28 and the third epitaxial layer36 to form the doped source/drain region 30. In the other exemplaryembodiment, an ion implantation process is performed on thesemiconductor substrate 10 before the formation of the recess 12, andthen the illustrated selective epitaxial growth processes are performedto build the doped source/drain region 30.

The present invention could be applicable for non-planar transistor aswell. Please refer to FIG. 7 through FIG. 9. FIG. 7 through FIG. 9illustrate a method of forming an epitaxial layer according to thesecond exemplary embodiment of the present invention. As shown in FIG.7, the semiconductor substrate 10 including at least a fin structure 38is provided. The semiconductor substrate 10 includes a plurality of finstructures 38 and shallow trench isolations (STI) 16. The fin structures38 may include AsGa, silicon on insulator (SOI) layer, epitaxial layer,SiGe layer or other semiconductor material. STI 16 may be filled withinsulating materials and disposed between the fin structures 38, or madeof the bottom oxide layer of the silicon on insulator (SOI) substrate.

Subsequently, the gate structure 14 is formed to partially cover the finstructures 38, and the first spacer 24 is selectively formed on thesides of the gate structure 14, in which the elongation direction of thegate structure 14 crosses the elongation direction of the fin structures38. As shown in FIG. 8, a dry etching process, such as an isotropicetching process, is performed to remove a portion of the fin structures38, wherein the mask could be a patterned photoresist layer (not shown)or the gate structure 14 and the first spacer 24. Accordingly, recesses12 are formed in the fin structures 38 at each of the two sides of thegate structure 14. Then, as shown in FIG. 9, the first selectiveepitaxial growth process, the second selective epitaxial growth processand the third selective epitaxial growth process illustrated previouslyare performed orderly; accordingly, the first epitaxial layer 26, thesecond epitaxial layer 28 and the third epitaxial layer 36 illustratedare formed in the recesses 12. Wherein the first selective epitaxialgrowth process has an operating pressure substantially smaller than orequal to 10 torr, as to the first epitaxial layer 26, the bottomthickness t1 is substantially larger than or equal to the side thicknesst2. Additionally, an ion implantation process could be further performedto make the second epitaxial layer 28 include the doped source/drainregion 30.

Please refer to FIG. 10. FIG. 10 illustrates a semiconductor deviceaccording to an exemplary embodiment of the present invention. As shownin FIG. 10, a semiconductor substrate 10 is provided, the semiconductorsubstrate 10 includes at least an iso region (namely an open region) 42and at least a dense region 44, and a plurality of transistors 46/48 arerespectively disposed in the iso region 42 and the dense region 44. Eachtransistor 46/48 includes at least a gate structure 50/52 and at least asource/drain region 54/56, and each of the source/drain regions 54/56 isdisposed in the semiconductor substrate 10 at each of the two sides ofthe gate structure 50/52. In this exemplary embodiment, the widths ofthe source/drain region 54/56 are the same, but not limited thereto, thewidth of the source/drain region 54 could be substantially larger orsmaller than the width of the source/drain region 56. Additionally, thepresent invention is also applicable for a plurality of source/drainregions having the different widths but being disposed in the sameregion having its individual pattern density, for instance, the presentinvention is applicable for a plurality of source/drain regions 54having the different widths which are disposed in the same iso region42. Each gate structure 50/52 includes a gate dielectric layer 18, agate conductive layer 20 disposed on the gate dielectric layer 18, and acap layer 22 disposed on the gate conductive layer 20. The gatedielectric layer 18 could be made of insulating materials such assilicon oxide, silicon oxynitride formed through thermal oxidationprocess or deposition process, or other high-k gate dielectric layerwith a dielectric constant larger than 4. The gate conductive layer 20may include conductive materials such as polysilicon, or metal layerwith specific work function. The selectively formed cap layer 22 can bemade of insulating materials such as silicon nitride, silicon oxide, orsilicon oxynitride. Each of the source/drain regions 54/56 includes afirst epitaxial layer 26, a second epitaxial layer 28 and a thirdepitaxial layer 36 as illustrated previously. The second epitaxial layer28 may include the corresponding conductive dopants to serve as a dopedsource/drain region. The distribution density of the source/drain region54 in the iso region 42 is substantially smaller than the distributiondensity of the source/drain region 56 in the dense region 44.

In this exemplary embodiment, the first selective epitaxial growthprocess has an operating pressure substantially smaller than or equal to10 torr; accordingly, the first epitaxial layer 26 may have a bottomthickness t3/t5 and a side thickness t4/t6 in the iso region 42 and inthe dense region 44, and the bottom thickness t3/t5 is substantiallylarger than or equal to the corresponding side thickness t4/t6 for eachfirst epitaxial layer 26 in the respective region. In other words, aratio of the bottom thickness t3/t5 to the side thickness t4/t6, thatis, t3/t4 in the iso region 42 and t5/t6 in the dense region 44, are allsubstantially larger than or equal to 1. Furthermore, the ratio of thebottom thickness t3/t5 to the side thickness t4/t6 is preferably andsubstantially larger than or equal to 1.4. The second epitaxial layer 28is disposed on the first epitaxial layer 26. The first epitaxial layer26 includes a first material, while the second epitaxial layer 28includes a second material, with a lattice constant of the firstmaterial and a lattice constant of the second material that aredifferent from a lattice constant of the semiconductor substrate 10. Thefirst material and the second material may include silicon-germanium(SiGe), and a first germanium concentration of the first material issubstantially smaller than a second germanium concentration of thesecond material. The third epitaxial layer 36 is disposed on the secondepitaxial layer 28, and the third epitaxial layer 36 may be made ofsilicon.

It is appreciated that the second epitaxial layer 28 includes conductivedopants such as p-type dopants or n-type dopants corresponding to thetype of the transistors 46/48, while the first epitaxial layer 26preferably excludes any conductive dopants. For instance, to build aPMOS, the second epitaxial layer 28 may contain boron ions, that is,parts of the second epitaxial layer 28 can serve as doped source/drainregion. In order to avoid the abnormal leakage of the transistors 46/48,the first epitaxial layer 26 is disposed between the second epitaxiallayer 28 and the semiconductor substrate 10 to prevent the diffusion ofthe conductive dopants from the second epitaxial layer 28 to thesemiconductor substrate 10 through the dislocations between theepitaxial layers and the semiconductor substrate 10. The operatingpressure of the first selective epitaxial growth process issubstantially smaller than or equal to 10 torr; consequently, even ifthe iso region 42 and the dense region 44 have different distributiondensities of the source/drain regions 54/56, in other words, theinterval between the source/drain regions 54 in the iso region 42 isdifferent form the interval between the source/drain regions 56 in thedense region 44, the first epitaxial layer 26 can still have the bottomthickness t3/t5 substantially larger than or equal to the side thicknesst4/t6. Therefore, the problem of the bottom thickness of the firstepitaxial layer 26 being substantially smaller than the side thicknessof the first epitaxial layer 26 in the iso region 42 can be solved, andthe first epitaxial layer 26 may have a better barrier function withoutmicro-loading effect.

In conclusion, the present invention provides a selective epitaxialgrowth process having an operating pressure smaller than or equal to 10torr to form the first epitaxial layer in the recess. This approach canbe further performed in a plurality of regions having different patterndensities in the semiconductor substrate for simultaneously forming thefirst epitaxial layers in the recesses; each of the first epitaxiallayers still has specific structure characteristics, that is, its bottomthickness is substantially larger than its side thickness. Accordingly,the process deviation due to the micro-loading effect may be eliminated,for instance, when the bottom thickness of the first epitaxial layer issubstantially smaller than side thickness of the first epitaxial layerin the iso region, and reciprocally in the dense region, therebyimproving the reliability of the semiconductor device.

Those skilled in the art will readily observe that numerousmodifications and alterations of the device and method may be made whileretaining the teachings of the invention. Accordingly, the abovedisclosure should be construed as limited only by the metes and boundsof the appended claims.

What is claimed is:
 1. A method of forming an epitaxial layer,comprising: providing a semiconductor substrate, wherein thesemiconductor substrate comprises at least a recess; and performing afirst selective epitaxial growth (SEG) process to form a first epitaxiallayer in the recess, wherein the first selective epitaxial growthprocess has an operating pressure substantially smaller than or equal to10 torr.
 2. The method of forming an epitaxial layer according to claim1, wherein the first epitaxial layer has a bottom thickness and a sidethickness.
 3. The method of forming an epitaxial layer according toclaim 2, wherein the bottom thickness of the first epitaxial layer issmaller than a depth of the recess.
 4. The method of forming anepitaxial layer according to claim 2, wherein the bottom thickness islarger than or equal to the side thickness, and a ratio of the bottomthickness to the side thickness is substantially larger than or equalto
 1. 5. The method of forming an epitaxial layer according to claim 4,wherein the ratio of the bottom thickness to the side thickness issubstantially larger than or equal to 1.4.
 6. The method of forming anepitaxial layer according to claim 1, wherein gases comprisingdichlorosilane (DCS), Germane (GeH₄) and hydrochloric acid (HCl) areintroduced during the first SEG process.
 7. The method of forming anepitaxial layer according to claim 6, wherein a concentration ratio ofDCS is substantially smaller than a concentration ratio of GeH₄.
 8. Themethod of forming an epitaxial layer according to claim 7, wherein aconcentration ratio of HCl is between the concentration ratio of DCS andthe concentration ratio of GeH₄.
 9. The method of forming an epitaxiallayer according to claim 1, further comprising performing a secondselective epitaxial growth process to form a second epitaxial layer onthe first epitaxial layer.
 10. The method of forming an epitaxial layeraccording to claim 9, wherein the first epitaxial layer comprises afirst material, the second epitaxial layer comprises a second material,and a lattice constant of the first material and a lattice constant ofthe second material are different from a lattice constant of thesemiconductor substrate.
 11. The method of forming an epitaxial layeraccording to claim 10, wherein the first material and the secondmaterial comprise silicon-germanium (SiGe).
 12. The method of forming anepitaxial layer according to claim 11, wherein a first germaniumconcentration of the first material is substantially smaller than asecond germanium concentration of the second material.
 13. The method offorming an epitaxial layer according to claim 10, further comprisingperforming a third selective epitaxial growth process for forming athird epitaxial layer on the second epitaxial layer.
 14. The method offorming an epitaxial layer according to claim 13, wherein a material ofthe third epitaxial layer comprises silicon (Si).
 15. A semiconductordevice, comprising: a semiconductor substrate comprising at least an isoregion (namely an open region) and at least a dense region; and aplurality of transistors respectively disposed in the iso region and thedense region, and each transistor comprises at least a source/drainregion, wherein each of the source/drain regions comprises a firstepitaxial layer, the first epitaxial layer has a bottom thickness and aside thickness, and the bottom thickness is substantially larger than orequal to the corresponding side thickness for each first epitaxiallayer.
 16. The semiconductor device according to claim 15, wherein theratio of the bottom thickness to the side thickness is substantiallylarger than or equal to 1.4.
 17. The semiconductor device according toclaim 15, wherein each of the source/drain regions further comprises asecond epitaxial layer disposed on the first epitaxial layer.
 18. Thesemiconductor device according to claim 17, wherein the first epitaxiallayer comprises a first material, the second epitaxial layer comprises asecond material, and a lattice constant of the first material and alattice constant of the second material are different from a latticeconstant of the semiconductor substrate.
 19. The semiconductor deviceaccording to claim 18, wherein the first material and the secondmaterial comprise silicon-germanium (SiGe).
 20. The semiconductor deviceaccording to claim 19, wherein a first germanium concentration of thefirst material is substantially smaller than a second germaniumconcentration of the second material.
 21. The semiconductor deviceaccording to claim 17, further comprising a third epitaxial layerdisposed on the second epitaxial layer.
 22. The semiconductor deviceaccording to claim 21, wherein a material of the third epitaxial layercomprises silicon (Si).
 23. The semiconductor device according to claim15, wherein each of the transistors further comprises at least a gatestructure, and the source/drain region is disposed in the semiconductorsubstrate at each of two sides of the gate structure.
 24. A method offorming an epitaxial layer, comprising: providing a semiconductorsubstrate, wherein the semiconductor substrate comprises at least arecess; and performing a first selective epitaxial growth (SEG) processto form a first epitaxial layer in the recess, wherein gases comprisingdichlorosilane (DCS), Germane (GeH₄) and hydrochloric acid (HCl) areintroduced, and the ratio of the concentration for DCS:GeH₄:HCl may be(0.5-2.1):(1.5-3.3):1.
 25. The method of forming an epitaxial layeraccording to claim 24, wherein the first selective epitaxial growthprocess has an operating pressure substantially smaller than or equal to10 torr.
 26. The method of forming an epitaxial layer according to claim24, wherein the first epitaxial layer comprises a first material, andthe first material comprises silicon-germanium (SiGe).
 27. The method offorming an epitaxial layer according to claim 26, wherein the firstepitaxial layer has a first germanium concentration between 20% and 30%.28. The method of forming an epitaxial layer according to claim 24,wherein a bottom thickness of the first epitaxial layer is larger thanor equal to a side thickness of the first epitaxial layer, and a ratioof the bottom thickness to the side thickness is substantially largerthan or equal to
 1. 29. The method of forming an epitaxial layeraccording to claim 28, wherein the ratio of the bottom thickness to theside thickness is substantially larger than or equal to 1.4.